EMF5T2R

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы, предварительно смещенные

Current - Collector (Ic) (Max) :

100mA, 500mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA, 5V / 270 @ 10mA, 2V

Frequency - Transition :

250MHz, 260MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Resistor - Base (R1) :

47kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

EMT6

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

50V, 12V