ZHB6792TC

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - Биполярные (BJT) - Массивы

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-223-8

Power - Max :

1.25W

Product Status :

Obsolete

Supplier Device Package :

SM8

Transistor Type :

2 NPN, 2 PNP (H-Bridge)

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

70V