FZT655TA

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA, 5V

Frequency - Transition :

30MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power - Max :

2 W

Product Status :

Active

Supplier Device Package :

SOT-223-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

150 V