RN1413(TE85L,F)

Производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - биполярные (BJT) - одиночные, предварительно смещенные

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Product Status :

Active

Resistor - Base (R1) :

47 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

S-Mini

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V