DMN2011UFX-7

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

12.2A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2248pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-VFDFN Exposed Pad

Power - Max :

2.1W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 10A, 4.5V

Supplier Device Package :

V-DFN2050-4

Vgs(th) (Max) @ Id :

1V @ 250µA