QS8J2TR

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Logic Level Gate, 1.5V Drive

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1940pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power - Max :

550mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

36mOhm @ 4A, 4.5V

Supplier Device Package :

TSMT8

Vgs(th) (Max) @ Id :

1V @ 1mA