SH8J62TB1

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

4.5A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power - Max :

2W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

56mOhm @ 4.5A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA