DF11MR12W1M1PB11BPSA1

Производитель :

Infineon Technologies

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

50A (Tj)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

3680pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

20mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

22.5mOhm @ 50A, 15V

Supplier Device Package :

AG-EASY1B-2

Vgs(th) (Max) @ Id :

5.55V @ 20mA