EPC2221

Производитель :

EPC

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

5A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Dual) Common Source

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

Die

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

-