SI4963BDY-T1-E3

Производитель :

Vishay Siliconix

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

4.9A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power - Max :

1.1W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

32mOhm @ 6.5A, 4.5V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.4V @ 250µA