FF08MR12W1MA1B11ABPSA1

Производитель :

Infineon Technologies

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

150A (Tj)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

15V

Input Capacitance (Ciss) (Max) @ Vds :

600V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

20mW (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.8mOhm @ 150A, 15V

Supplier Device Package :

AG-EASY1BM-2

Vgs(th) (Max) @ Id :

5.55V @ 90mA