EPC2110ENGRT

Производитель :

EPC

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

3.4A

Drain to Source Voltage (Vdss) :

120V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Dual) Common Source

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 60V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

60mOhm @ 4A, 5V

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 700µA