NX1029X,115

Производитель :

Nexperia USA Inc.

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

330mA, 170mA

Drain to Source Voltage (Vdss) :

60V, 50V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

500mW

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

7.5Ohm @ 100mA, 10V

Supplier Device Package :

SOT-666

Vgs(th) (Max) @ Id :

2.1V @ 250µA