EPC2101

Производитель :

EPC

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

9.5A, 38A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

2.7nC @ 5V, 12nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 30V, 1200pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 3mA, 2.5V @ 12mA