FS05MR12A6MA1BBPSA1

Производитель :

Infineon Technologies

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

200A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Chassis Mount

Operating Temperature :

-

Package / Case :

Module

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

AG-HYBRIDD-2

Vgs(th) (Max) @ Id :

-