QJD1210SA1

Производитель :

Powerex Inc.

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

100A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

8200pF @ 10V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

520W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

17mOhm @ 100A, 15V

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

1.6V @ 34mA