LN100LA-G

Производитель :

Microchip Technology

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Standard

FET Type :

2 N-Channel (Cascoded)

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-25°C ~ 125°C (TJ)

Package / Case :

6-VFLGA

Power - Max :

350mW

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3000Ohm @ 2mA, 2.8V

Supplier Device Package :

6-LFGA (3x3)

Vgs(th) (Max) @ Id :

1.6V @ 10µA