EPC2106ENGRT

Производитель :

EPC

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

1.7A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

0.73nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Power - Max :

-

Product Status :

Discontinued at Digi-Key

Rds On (Max) @ Id, Vgs :

70mOhm @ 2A, 5V

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 600µA