VWM200-01P

Производитель :

IXYS

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

210A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

6 N-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

430nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

V2-PAK

Power - Max :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

5.2mOhm @ 100A, 10V

Supplier Device Package :

V2-PAK

Vgs(th) (Max) @ Id :

4V @ 2mA