G2R1000MT17D

Производитель :

GeneSiC Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

139 pF @ 1000 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

53W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2A, 20V

Supplier Device Package :

TO-247-3

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+20V, -5V

Vgs(th) (Max) @ Id :

4V @ 2mA