FDB0165N807L

Производитель :

onsemi

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

310A (Tc)

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

304 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

23660 pF @ 40 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab)

Power Dissipation (Max) :

3.8W (Ta), 300W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.6mOhm @ 36A, 10V

Supplier Device Package :

TO-263-7

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA