5HN01M-TL-E-SA

Производитель :

Rochester Electronics, LLC

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

50 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.4 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

6200 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SC-70, SOT-323

Power Dissipation (Max) :

150mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7.5Ohm @ 50mA, 10V

Supplier Device Package :

MCP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 100µA