IV1Q12160T4

Производитель :

Inventchip

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

43 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

885 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-4

Power Dissipation (Max) :

138W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

195mOhm @ 10A, 20V

Supplier Device Package :

TO-247-4

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

+20V, -5V

Vgs(th) (Max) @ Id :

2.9V @ 1.9mA