RQ6E030ATTCR

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.4 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

240 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

91mOhm @ 3A, 10V

Supplier Device Package :

TSMT6 (SC-95)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 1mA