R6007JNJGTL

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17.5 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

475 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

96W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

780mOhm @ 3.5A, 15V

Supplier Device Package :

LPTS

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

7V @ 1mA