IQE013N04LM6CGATMA1

Производитель :

Infineon Technologies

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

31A (Ta), 205A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3900 pF @ 20 V

Mounting Type :

Surface Mount, Wettable Flank

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

2.5W (Ta), 107W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.35mOhm @ 20A, 10V

Supplier Device Package :

PG-TTFN-9-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 51µA