SQ3418EV-T1_GE3

Производитель :

Vishay Siliconix

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

678 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation (Max) :

5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

32mOhm @ 5A, 10V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA