XK1R9F10QB,LXGQ

Производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

160A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

184 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

11500 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

375W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.92mOhm @ 80A, 10V

Supplier Device Package :

TO-220SM(W)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 1mA