TK100E06N1,S1X

Производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

100A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

140 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

10500 pF @ 30 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

255W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.3mOhm @ 50A, 10V

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA