R6006JND3TL1

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

6A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.5 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

410 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

86W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

936mOhm @ 3A, 15V

Supplier Device Package :

TO-252

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

7V @ 800µA