RQ3G110ATTB

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta), 35A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

46 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2750 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

12.4mOhm @ 11A, 10V

Supplier Device Package :

8-HSMT (3.2x3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA