TP65H050G4WS

Производитель :

Transphorm

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

34A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1000 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

119W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

60mOhm @ 22A, 10V

Supplier Device Package :

TO-247-3

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.8V @ 700µA