VN10LPSTZ

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

270mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

60 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

E-Line-3, Formed Leads

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

5Ohm @ 500mA, 10V

Supplier Device Package :

E-Line (TO-92 compatible)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 1mA