1HN04CH-TL-W

Производитель :

onsemi

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

270mA (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.9 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

15 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

8Ohm @ 140mA, 10V

Supplier Device Package :

3-CPH

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.6V @ 100µA