YJS4407A-F2-0000HF

Производитель :

Yangzhou Yangjie Electronic Technology Co.,Ltd

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

12A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 20V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

40.1 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2152 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power Dissipation (Max) :

3.2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 12A, 20V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

2.8V @ 250µA