YJL02N10A-F2-0000HF

Производитель :

Yangzhou Yangjie Electronic Technology Co.,Ltd

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.56 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

387 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

1.3W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

280mOhm @ 2A, 10V

Supplier Device Package :

SOT-23

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA