ZVN2110ASTOB

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

320mA (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

75 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

E-Line-3

Power Dissipation (Max) :

700mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

4Ohm @ 1A, 10V

Supplier Device Package :

E-Line (TO-92 compatible)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 1mA