NP109N04PUG-E1-AY

Производитель :

Renesas Electronics America Inc

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

110A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

270 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

15750 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

1.8W (Ta), 220W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.3mOhm @ 55A, 10V

Supplier Device Package :

TO-263-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA