62-0095PBF

Производитель :

Infineon Technologies

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Ta), 12A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

900 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

-

Power Dissipation (Max) :

2W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

13.4mOhm @ 10A, 10V

Supplier Device Package :

-

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.55V @ 250µA