RGT30NS65DGC9

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - БТИЗ - Одиночные

Current - Collector (Ic) (Max) :

30 A

Current - Collector Pulsed (Icm) :

45 A

Gate Charge :

32 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power - Max :

133 W

Product Status :

Active

Reverse Recovery Time (trr) :

55 ns

Supplier Device Package :

TO-262

Switching Energy :

-

Td (on/off) @ 25°C :

18ns/64ns

Test Condition :

400V, 15A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Voltage - Collector Emitter Breakdown (Max) :

650 V