EMB53T2R

Производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы, предварительно смещенные

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA, 10V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Resistor - Base (R1) :

4kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

EMT6

Transistor Type :

2 PNP Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V