IMD10AMT1G

Производитель :

onsemi

категория продукта :

Транзисторы - биполярные (BJT) - массивы, предварительно смещенные

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V / 68 @ 100mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SC-74, SOT-457

Power - Max :

285mW

Product Status :

Active

Resistor - Base (R1) :

13kOhms, 130Ohms

Resistor - Emitter Base (R2) :

10kOhms

Supplier Device Package :

SC-74R

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V