MPSH10

Производитель :

NTE Electronics, Inc

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA, 10V

Frequency - Transition :

650MHz

Gain :

-

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

-

Power - Max :

350mW

Product Status :

Active

Supplier Device Package :

-

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

25V