NTE65

Производитель :

NTE Electronics, Inc

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 14mA, 10V

Frequency - Transition :

5GHz

Gain :

18dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

2.4dB ~ 3dB @ 500MHz ~ 1GHz

Operating Temperature :

-

Package / Case :

3-SMD, Flat Lead

Power - Max :

180mW

Product Status :

Active

Supplier Device Package :

3-SMD

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V