MT3S113(TE85L,F)

Производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 30mA, 5V

Frequency - Transition :

12.5GHz

Gain :

11.8dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.45dB @ 1GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

800mW

Product Status :

Active

Supplier Device Package :

S-Mini

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5.3V