BFU530XVL

Производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

40mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA, 8V

Frequency - Transition :

11GHz

Gain :

16.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-253-4, TO-253AA

Power - Max :

450mW

Product Status :

Active

Supplier Device Package :

SOT-143B

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V