BFG10/X,215

Производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

250mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA, 5V

Frequency - Transition :

1.9GHz

Gain :

7dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

175°C (TJ)

Package / Case :

TO-253-4, TO-253AA

Power - Max :

400mW

Product Status :

Obsolete

Supplier Device Package :

SOT-143B

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

8V