FJB102TM

Производитель :

onsemi

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

8 A

Current - Collector Cutoff (Max) :

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A, 4V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max :

80 W

Product Status :

Active

Supplier Device Package :

D2PAK (TO-263)

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 80mA, 8A

Voltage - Collector Emitter Breakdown (Max) :

100 V