2SA1163-GR,LF

Производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 6V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

125°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

150 mW

Product Status :

Active

Supplier Device Package :

S-Mini

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

120 V