DN0150ALP4-7

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA, 6V

Frequency - Transition :

60MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XFDFN

Power - Max :

450 mW

Product Status :

Obsolete

Supplier Device Package :

X2-DFN1006-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

50 V